IPU49CN10N G
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IPU49CN10N G datasheet
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МаркировкаIPU49CN10N G
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ПроизводительInfineon Technologies
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ОписаниеInfineon Technologies IPU49CN10N G Configuration: Single Continuous Drain Current: 20 A Drain-source Breakdown Voltage: 100 V Factory Pack Quantity: 1500 Fall Time: 3 ns Forward Transconductance Gfs (max / Min): 21 S / 11 S Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-251 Power Dissipation: 44 W Product Category: MOSFET Resistance Drain-source Rds (on): 49 mOhms Rise Time: 4 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 14 ns RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 49 mOhms Forward Transconductance gFS (Max / Min): 21 S / 11 S Typical Turn-Off Delay Time: 14 ns
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Количество страниц12 шт.
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Форматы файлаHTML, PDF
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